EC6701 RF and Microwave Engineering, Final year, Department of Electronics & Communication Engineering, First and second Units Questions.

PART - A (5 x 2 = 10Marks)
1.      Obtain the ABCD matrix of a transformer with turns ratio N:1.
2.      Mention any four differences between low & High frequency microwave networks.
3.      What are the advantages of S-parameters?
4.      Draw the high frequency equivalent circuit of resistor & Inductor..
5.      Draw the equivalent circuit of practical Capacitor at radio frequency.
6.      Define Unilateral Power gain.
7.      Draw VSWR circle for reflection coefficient.
8.      Define Stability.
9.      Why impedance matching is required? What are the other constraints required.
10.  A GaAs MESFET has the following parameters S11=0.65∟-154 º, S12=0.02∟40 º, S21=2.04∟185 º, S22=0.55∟30 º. Calculate its maximum stable power gain.

                                                          PART-B
11.  Formulate S-matrix for N –port   Microwave Network and its properties.                (16)
12.  Derive the relation between Z-parameter and S-Parameters.                                     (16)
13.  Derive power relations of Microwave power amplifier.                                             (16)
14.  With reference to RF amplifier discuss the consideration for Stability circles & Draw input and output stability circles                                                                                    (16)
15.  Discuss the smith chart approach to design the L-section and T-section matching networks.                                                                                                                       (16)