PART
- A (5 x 2 = 10Marks)
1.
Obtain the ABCD matrix of a transformer
with turns ratio N:1.
2.
Mention any four differences between low
& High frequency microwave networks.
3.
What are the advantages of S-parameters?
4.
Draw the high frequency equivalent
circuit of resistor & Inductor..
5.
Draw the equivalent circuit of practical
Capacitor at radio frequency.
6.
Define Unilateral Power gain.
7.
Draw VSWR circle for reflection
coefficient.
8.
Define Stability.
9.
Why impedance matching is required? What
are the other constraints required.
10. A
GaAs MESFET has the following parameters S11=0.65∟-154 º, S12=0.02∟40
º, S21=2.04∟185 º, S22=0.55∟30 º. Calculate its maximum
stable power gain.
PART-B
11. Formulate
S-matrix for N –port Microwave Network
and its properties. (16)
12. Derive
the relation between Z-parameter and S-Parameters. (16)
13. Derive
power relations of Microwave power amplifier. (16)
14. With
reference to RF amplifier discuss the consideration for Stability circles &
Draw input and output stability circles (16)
15. Discuss
the smith chart approach to design the L-section and T-section matching
networks. (16)
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