EC6202 Electronic Devices and Circuits, Second year, Department of Electrical and Electronics Engineering, Model Exam Questions

EC6202 Electronic Devices and Circuits, Second year, Department of Electrical and Electronics Engineering, Model Exam Questions.

PART A

1. What is avalanche breakdown in PN junction diode?

2. Define and explain peak inverse voltage ( PIV)?

3. Compare BJT and JFET?

4.Define early effect?

5. Draw the hybrid model of CE amplifier?

6. Define frequency response?

7. What is a differential amplifier? What are its advantages?

8. What are the advantages of tuned amplifiers?

9. Define: Piezo electric effect?

10. State the Bharkausen’s criterion for oscillation?

Part B

11 a) Explain the working of centre tapped full wave rectifier with neat            (or)

Diagram and derive the necessary equations

b) Explain the construction and working of LED with its characteristics?

12) a) With a neat sketch explain the construction and characteristics of DEMOSFET.    (or)

b)  With a neat sketch explain the construction and working characteristics of a SCR?

13) a) Explain about CE amplifier and derive the expression for h parameters of the same. Also

derive the expression for gain, input impedance and output impedance of CE amplifier.   (or)

b)Explain common source MOSFET amplifier and derive an expression for voltage gain  input resistance and output resistance

14) a) Draw the circuit diagram of an emitter coupled BJT differential amplifier and derive

expressions for differential gain, common mode gain, CMRR, input impedance and                (or)

output impedance.

b) With a neat sketch explain single tuned  amplifier and derive an expression for bandwidth

15) a)Determine Rof , Rif, Av, Avi for the following

i) Voltage shunt feed back amplifier

ii) Current series feed back amplifier

b)Explaini)Hartley oscillator            ii) Wein bridge Oscillator

                                                    PART C

16) Explain RC phase shift oscillator